LED chips are divided into four types: MB chip, GB chip, TS chip, and AS chip. The following definitions and features of these four chips will be analyzed. 1.MB chip definition and characteristics definition: Features: Thermal Conductivity 2. Wafer bonding the epitaxial layer and the substrate through the metal layer while reflecting the photons to avoid absorption of the substrate. 2.GB chip definition and features definition: 1: The transparent sapphire substrate replaces the light-absorbing GaAs substrate, and its light output power is more than twice that of the conventional AS (Absorbable structure) chip, and the sapphire substrate is similar to the GaP substrate of the TS chip. 3.TS chip definition and characteristics definition: Features: 4.AS chip definition and characteristics definition: Features: 1. The quaternary chip is prepared by the MOVPE process, and the brightness is brighter than the conventional chip. LED chip material epitaxial type 1, LPE: Liquid Phase Epitaxy (liquid phase epitaxy) GaP / GaP 2, VPE: Vapor Phase Epitaxy (vapor phase epitaxy) GaAsP / GaAs 3, MOVPE: Metal Organic Vapor Phase Epitaxy (organic metal vapor phase epitaxy) AlGaInP, GaN 4, SH: GaAlAs / GaAs Single Heterostructure (single-isotype structure) GaAlAs / GaAs 5, DH: GaAlAs / GaAs Double Heterostructure, (double profile structure) GaAlAs / GaAs 6. DDH: GaAlAs/GaAlAs Double Heterostructure, (double heterostructure) GaAlAs/GaAlAs (Edit: Technology) High Frequency Ferrite Transformer,Electric Transformer,Core Type Transformer,Frequency Transformer IHUA INDUSTRIES CO.,LTD. , https://www.ihua-magnetics.com
MB chip: Metal Bonding chip; this chip belongs to UEC's patented product
1. Using a material with high heat dissipation coefficient---Si as the substrate, heat dissipation is easy.
GaAs: 46 W/mK
GaP: 77 W/mK
Si: 125 to 150 W/mK
Cupper: 300~400 W/mk
SiC: 490 W/mK
3. The conductive Si substrate replaces the GaAs substrate and has good thermal conductivity (the thermal conductivity is 3~4 times different), which is more suitable for the high drive current field.
4, the bottom metal reflective layer, is conducive to the improvement of luminosity and heat dissipation.
5, the size can be increased, applied to the High power field, eg: 42mil MB
GB chip: Glue Bonding chip; this chip belongs to UEC's patented product features:
2: The chip emits light on all sides and has an excellent Pattern.
3: In terms of brightness, the overall brightness has exceeded the level of the TS chip (8.6 mils).
4: Two-electrode structure, which is slightly inferior to the TS single-electrode chip in terms of high current resistance.
TS chip: Transparent structure chip, which is a patented product of HP.
1. The chip process is complex and much higher than AS LED .
2. Excellent reliability.
3. Transparent GaP substrate, does not absorb light, and has high brightness.
4. Wide range of applications.
AS chip: Absorbable structure chip. After nearly 40 years of development efforts, Taiwan's LED optoelectronics industry is at a mature stage in the research and development, production and sales of this type of chip. The research and development level of major companies in this area is basically At the same level, the gap is not big. The mainland chip manufacturing industry started late, and its brightness and reliability still have a certain gap with the Taiwanese industry. Here we talk about the AS chip, especially the UEC AS chip, eg: 712SOL-VR, 709SOL-VR, 712SYM- VR, 709SYM-VR, etc.
2. Excellent reliability.
3. Wide range of applications.